Probing Defects in Nitrogen-Doped Cu2O

نویسندگان

  • Junqiang Li
  • Zengxia Mei
  • Lishu Liu
  • Huili Liang
  • Alexander Azarov
  • Andrej Kuznetsov
  • Yaoping Liu
  • Ailing Ji
  • Qingbo Meng
  • Xiaolong Du
چکیده

Nitrogen doping is a promising method of engineering the electronic structure of a metal oxide to modify its optical and electrical properties; however, the doping effect strongly depends on the types of defects introduced. Herein, we report a comparative study of nitrogen-doping-induced defects in Cu2O. Even in the lightly doped samples, a considerable number of nitrogen interstitials (Ni) formed, accompanied by nitrogen substitutions (NO) and oxygen vacancies (VO). In the course of high-temperature annealing, these Ni atoms interacted with VO, resulting in an increase in NO and decreases in Ni and VO. The properties of the annealed sample were significantly modified as a result. Our results suggest that Ni is a significant defect type in nitrogen-doped Cu2O.

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عنوان ژورنال:

دوره 4  شماره 

صفحات  -

تاریخ انتشار 2014